advance technical information characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 5ma) 050-7115 rev- 9-2001 maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms a na volts min typ max 500 89 0.050 250 1000 100 35 APT50M50L2FLL 500 89 356 30 40 890 7.12 -55 to 150 300 89 50 3200 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com usa 405 s.w. columbia street bend, oregon 97702-1035 phone: (541) 382-8028 fax: (541) 388-0364 europe chemin de magret f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 g d s power mos 7 tm is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switching losses are addressed with power mos 7 tm by significantly lowering r ds(on) and q g . power mos 7 tm combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt's patented metal gate structure. ? lower input capacitance ? increased power dissipation ? lower miller capacitance ? easier to drive ? lower gate charge, qg ? popular to-264 max package to-264 max APT50M50L2FLL 500v 89a 0.050 w power mos 7 tm fredfet
dynamic characteristics 050-7115 rev- 9-2001 apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bsc 2-plcs. to-264 max tm (l2) package outline APT50M50L2FLL advance technical information source-drain diode ratings and characteristics characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d [cont.]) peak diode recovery dv / dt 5 reverse recovery time (i s = -i d [cont.], di / dt = 100a/s) reverse recovery charge (i s = -i d [cont.], di / dt = 100a/s) peak recovery current (i s = -i d [cont.], di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps symbol c iss c oss c rss q g q gs q gd t d (on) t r t d (off) t f characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25c r g =0.6 w min typ max 9840 2030 153 246 65 112 24 22 56 8 unit pf nc ns min typ max 89 356 1.3 15 t j = 25c 300 t j = 125c 600 t j = 25c 2.6 t j = 125c 10 t j = 25c 17 t j = 125c 34 thermal characteristics symbol r q jc r q ja min typ max 0.14 40 unit c/w characteristic junction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 0.81mh, r g = 25 w , peak i l = 89a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d [ cont. ] di / dt 700a/s v r v dss t j 150 c apt reserves the right to change, without notice, the specifications and information contained herein.
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